Quasi type II semiconductor quantum well device

Details Quasi type II semiconductor quantum well device Quasi type II semiconductor quantum well device

1995-10-17

1998-11-24

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 22, 359248, H01L 2906

Patent

active

058411518

ABSTRACT:
A semiconductor device having a quantum well structure, the quantum well structure having: a first quantum well layer for forming a quantum well for electrons, the first quantum well layer having a first band structure; a second quantum well layer for forming a quantum well for holes, the second quantum well layer having a second band structure different from the first band structure; and an intermediate layer interposed between the first and second quantum well layers having a third band structure different from the first and second band structures, wherein the first quantum well layer forms a barrier to holes, and the second quantum well layer forms a barrier to electrons. Semiconductor devices having quantum well structures different from conventional type I and II quantum well structures are provided.

REFERENCES:
patent: 5159421 (1992-10-01), Wolff
patent: 5194983 (1993-03-01), Voisin
patent: 5481559 (1996-01-01), Kawamura

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