Quasi static, virtually nonvolatile random access memory cell

Details Quasi static, virtually nonvolatile random access memory cell Quasi static, virtually nonvolatile random access memory cell

1976-10-05

1978-05-23

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Flip-flop

307279, 307238, 365149, 365184, G11C 1124, G11C 1140

Patent

active

040914607

ABSTRACT:
A nonvolatile Charge Injection Device (NOVCID) of Metal-Nitride-Oxide-Semiconductor (MNOS) material is operated in a novel manner in combination with a flip-flop to provide a charge pumped volatile memory storage system that can be continuously nondestructively read and on command, by applying a high positive potential to the field plate of the NOVCID, the information stored in the volatile mode is transferred to the nonvolatile state. To recover the stored information an alternating current signal is applied to the field plate.

REFERENCES:
patent: 3662351 (1972-05-01), Ho et al.
patent: 3662356 (1972-05-01), Michon et al.
patent: 3916390 (1975-10-01), Chang et al.

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