Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-16
2011-08-16
Blum, David S (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29256
Reexamination Certificate
active
07999315
ABSTRACT:
A semiconductor device can include a drift region, at least a portion of the drift region located laterally between a drain region and a source region. The drift region can include a first layer having a first doping concentration and a second layer having a second higher doping concentration than the first layer. The second layer of the drift region be configured to allow drift current between the source region and the drain region when a depletion region is formed in at least a portion of the first layer between the source region and the drain region.
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Blum David S
Fairchild Semiconductor Corporation
Schwegman Lundberg & Woessner, P.A.
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