Quasi-mesh gate structure for lateral RF MOS devices

Details Quasi-mesh gate structure for lateral RF MOS devices Quasi-mesh gate structure for lateral RF MOS devices

1998-02-07

1999-05-04

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257341, 257401, H01L 2976

Patent

active

059006633

ABSTRACT:
A quasi-mesh gate structure for the RF MOS transistor having a conductive plug source-body-backside connection is disclosed. The RF MOS transistor having the quasi-mesh gate structure utilizes significantly shorter feeding gate paths as compared to the long feeding gate paths used in the prior art RF MOS devices. The RF MOS transistor having the quasi-mesh gate structure can utilize the polysilicon gates or silicided gates. This results in simplification of the fabrication process and/or improved performance at high frequencies.

REFERENCES:
patent: 5155563 (1992-10-01), Davies et al.
patent: 5164802 (1992-11-01), Jones et al.
patent: 5304827 (1994-04-01), Malhi et al.
patent: 5528065 (1996-06-01), Battersby et al.

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