Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate
2007-03-06
2007-03-06
Gupta, Yogendra N. (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
C117S088000, C117S935000, C117S942000, C117S943000
Reexamination Certificate
active
10727613
ABSTRACT:
A single crystal of quartz thin film and a production method therefor are provided. A method for producing a quartz epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a quartz on the substrate. The single crystal of quartz thin film has excellent crystalinity, and optical properties.
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Nakamura Takato
Nonaka Satoshi
Shinriki Yoichi
Takahashi Naoyuki
Tamanuki Katsumi
Gupta Yogendra N.
Humo Laboratory, Ltd.
Lepping Kavita B.
Sartori Michael A.
Song Matthew J.
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