Quantum well structure and semiconductor device using the same

Details Quantum well structure and semiconductor device using the same Quantum well structure and semiconductor device using the same

1991-05-22

1992-06-16

Hille, Rolf

Coherent light generators

Particular component circuitry

Optical pumping

357 4, 357 16, 357 22, 372 45, 372 54, 372 55, H01L 3300, H01L 2712, H01L 29161

Patent

active

051228440

ABSTRACT:
A quantum well structure is disclosed, which is comprised of a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confinement layers of an energy gap greater than that of the quantum well layer. A second material of a lattice constant different from that of a first material primarily for the quantum well layer is disposed in the quantum well layer to provide a phase shift in the period of the crystal lattice of the first material, thereby forming energy levels in the forbidden band of the quantum well layer. A semiconductor device which employs such a quantum well structure and is so constructed as to utilize its physical phenomenon which is caused by the energy levels in the forbidden band. In concrete terms, the present invention has its feature in allowing ease in the fabrication of an intermediate infrared or blue light emitting device, for instance.

REFERENCES:
patent: 4802181 (1989-01-01), Iwata
patent: 4816878 (1989-03-01), Kano et al.
patent: 4857971 (1989-08-01), Burnham
patent: 4862471 (1989-08-01), Pankove
Applied Physics Letters, vol. 52, No. 13, 28th Mar. 1988, pp. 1080-1082, N.Y., US; L. A. Kolodziejski et al.: "Excitonic trapping from atomic layer epitaxial ZnTe within ZnSe/(Zn,Mn)Se heterostructures".
Electronic Letters, vol. 13, No. 25/26, 9th Dec. 1982, pp. 1095-1097, London, GB; R. D. Burnham et al.: "Low-threshold single quantum-well (60 A) GaAlAs lasers grown by MO-CVD with MG AS p-type dopant".
Soviet Physics Semiconductors, vol. 22, No. 6, Jun. 1988, pp. 650-652, N.Y., US: Z. I. Alferov et al.: "Quantum-well separate-confinement InGaAsP/GaAs (gamma=0.86-0.78 mum) laser (Jth=100 A/Cm2, efficiency 59%)".

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