Quantum well structure and semiconductor device using it and...

Details Quantum well structure and semiconductor device using it and... Quantum well structure and semiconductor device using it and...

2007-02-27

2007-02-27

Smith, Bradley K. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S014000, C257SE33008, C257S079000, C438S029000, C438S047000

Reexamination Certificate

active

10503269

ABSTRACT:
A semiconductor element excellent in luminous efficiency which sufficiently eliminates the effect of a piezo-electric field with the crystallinity of an active layer well retained. A quantum well active layer has a laminated structure in which a barrier layer undoped region ((In0.02Ga0.98N layer702), a quantum well layer (undoped In0.02Ga0.8N layer703) and a barrier layer n-type region (n-type In0.02Ga0.98N layer701) are formed in this order. The Si concentration of a barrier layer n-type region is up to 5E18 cm−3.

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Campbell, Stephen, “The Science and Engineering of Microelectronic Fabrication,” 1996, Oxford University Press, p. 43.

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