Quantum well photoelectric detector with improved detectivity

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

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257 21, H01J 4014

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active

052966992

ABSTRACT:
Photoelectric detector presenting a multiple quantum well structure, each quantum well comprising a first barrier made from a first semiconductor material, a well made from a second semiconductor material, and a second barrier made from a third semiconductor material, each semiconductor material being defined by its chemical composition, and the electric conductibility in the detector being ensured by propagation, from the first barrier to the second barrier, of given charge carriers in a given electronic band, presenting an energy extremum in each of the said materials. In accordance with the invention, said semiconductor materials are at least partly doped with carriers, the chemical composition of the first and third semiconductor materials being such that the difference in energy, between the energy extremum of the said electronic band in the first semiconductor material and the energy extremum of the said electronic band in the third semiconductor material, is greater in absolute value than the maximum energy of the optical longitudinal phonons in the second semiconductor material making up the well. Application: infrared detectors, especially in the range 2.times.10.sup.13 -4.times.10.sup.13 Hz.

REFERENCES:
patent: 4873555 (1989-10-01), Coon et al.
patent: 5023673 (1991-06-01), McCall et al.
"Steady State Photovoltaic Effect in Asymmetrical Graded Superlattices," Liu, Physical Rev. Let. V. 67N. 16, Oct. 1991 pp. 2231-2234.
"Tunable Long-Wavelength Detectors Using Graded Barrier Quantum Wells Grown by Electron Beam Source Epitaxy", Levine et al., Applied Phys. Let. V. 57 No. 4, Jul. 1990 pp. 383-385.
"New Mode of IR Detection Using Quantum Wells", Coon et al. Applied Phy. Let. Sep. 1984 pp. 649-651.

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