Lateral photo-sensing device, opt-electronic integrated circuit

Details Lateral photo-sensing device, opt-electronic integrated circuit Lateral photo-sensing device, opt-electronic integrated circuit

1992-02-26

1994-03-22

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

257499, H01L 4900, H01L 2700

Patent

active

052966984

ABSTRACT:
The present invention is directed to a lateral photo-sensing device comprising a first semiconductor layer of a first conductivity type formed on a semi-insulative semiconductor substrate, a second semiconductor layer of a second conductivity type formed on the first semiconductor layer for absorbing a light, a pair of electrodes formed on the second semiconductor layer, rectifying junction being formed between the electrodes and the second semiconductor layer, and a biasing electrode for applying a biasing voltage to the first semiconductor layer. Further the present invention is directed to an opt-electronic integrated circuit using the lateral photo-sensing device and a photo-logic device using the lateral photo-sensing device.

REFERENCES:
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patent: 4962303 (1990-10-01), Chu
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L. Yang et al, "Monolithically Integrated InGaAs/InP MSM-FET Photo-Receiver Prepared by Chemical Beam Epitaxy", Journal of Crystal Growth, vol. 105, No. 1/4, Amsterdam NL, pp. 162-167 (Oct. 1990).
"Photo-Gate DET", IBM Technical Disclosure Bulletin, vol. 32, No. 1, New York, U.S., p. 34 (Jun. 1989).
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K. Okumura et al, "Optical Logic Inverter and AND Elements Using Laser or Light-Emitting Diodes and Photodetectors in a Bistable System", Optics Letters, vol. 9, No. 11, New York, U.S., pp. 519-521 (Nov. 1984).

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