Coherent light generators – Particular active media – Semiconductor
Patent
1986-07-01
1988-07-26
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 44, 357 16, 357 17, H01S 319
Patent
active
047605790
ABSTRACT:
A resonant quantum well laser incorporates semiconductor barriers on one or both sides of the quantum well to increase the charge density within the quantum well. The composition of the injection layers can be tailored in a manner that the energies of the charge carriers in the injection layers are about that of a resonant energy level for that type of charge carrier in the quantum well. The barrier layers on one or both sides of the quantum well enhance the probability of the charge carrier being in the well for a longer time and travelling a longer distance, increasing the chance of scattering. The charge carriers, electrons or holes, can move from their respective injection layers into nearly identical energy levels within the quantum well, by tunneling through the thin barrier layers. The number of carriers which are available to transfer into the lasting energy level is increased, thereby increasing the efficiency of the laser and lowering its threshold current.
REFERENCES:
patent: 4365260 (1982-12-01), Holonyak
patent: 4438446 (1984-03-01), Tsang
patent: 4439782 (1984-03-01), Holonyak, Jr.
Vassell et al., "Multibarrier . . . Heterostructures", 54 Journal of Appl. Phy. 5206-5213 (Sep. 1983).
Tsuchiya et al., "Precise Control . . . ", vol. 25, No. 3, Journal of Applied Physics 185-187 (Mar. 1986).
Sollner et al., "Resonant . . . 2.5 THZ", 43 Applied Physics Letter 588-590 (Sep. 1983).
Sollner et al., "Quantum Well Oscillators", 45 Applied Physics Letters, 1319-1321 (Dec. 1984).
Holonyak, "Quantum Well Semiconductor Lasers", (Review) 19 Sov. Phys. Semicond., 943-958 (Sep.) 1985.
Schulman Joel N.
Smirl Arthur L.
Vaidyanathan Kavasseri V.
Coble Paul M.
Davie James W.
Gudmestad Terje
Hughes Aircraft Company
Karambelas A. W.
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