Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-03-17
2000-08-29
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257299, 257290, H01L 29788
Patent
active
061112887
ABSTRACT:
A new switching element and a circuit device and the like using the same element are provided, which comprises semiconductor in which a channel region is formed at an interface with an insulating film, first and second terminals S, D, which are located in corresponding manner to both ends of the channel region, and through which a tunnel current is let to flow into the channel region, and a third terminal G giving a high frequency vibration to a potential barrier of the channel region through the insulating film, wherein the tunnel current flowing into the channel region is increased as a value of an exponential function is increased with a predetermined threshold vibration frequency as a boundary value.
REFERENCES:
patent: 5606175 (1997-02-01), Truscott
patent: 5731717 (1998-03-01), Ohshima et al.
patent: 5896315 (1999-04-01), Wong
M. Buettiker, et al. "Traversal Time for Tunneling", Physical Review Letters, vol. 49, No. 23 (Dec. 6, 1982), pp. 1739-1742.
M. Buettiker, et al. "Traversal Time for Tunneling", Physica Scripta, vol. 32, (Apr. 2, 1985), pp. 429-434.
Tanaka Tomoharu
Tanzawa Toru
Toriumi Akira
Watanabe Hiroshi
Yasuda Naoki
Hardy David
Kabushiki Kaisha Toshiba
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