Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-20
2007-03-20
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S004000, C257S298000, C977S773000
Reexamination Certificate
active
10482350
ABSTRACT:
A quantum supercapacitor having nanostrucutured material located between electrodes. The material includes clusters with tunnel-transparent gaps. The clusters have sizes within the range of 7.2517 nm≦r≦29.0068 nm, at which the resonant characteristics of the electron are exhibited. The size is determined by the circular radius of the electronic wave according to the formula r0=/(meα2c)=7.2517 nm (Plank constant, electron mass me, fine structure constant α=1/137,036, speed of light c). The cluster size is set within the range r0≦4r0; the width of the tunnel-transparent gap being ≦r0=7.2517 nm. The energy in the supercapacitor is stored by means of controlled breakthrough of the material—a dielectric, with subsequent restoring thereof. The energy is stored uniformly along the whole volume of the material due to the resonant coupling of the electrons on the cluster. The maximum stored specific energy stored is 1.66 MJ/kg.
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Brooks & Kushman P.C.
Huynh Andy
Nguyen Thinh T
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