Static information storage and retrieval – Systems using particular element – Semiconductive
Patent
1998-09-30
2000-02-15
Lam, David
Static information storage and retrieval
Systems using particular element
Semiconductive
365151, G11C 1136
Patent
active
060260130
ABSTRACT:
Quantum random address memory apparatus including a low dimensional plurality of address ports, a plurality of nano-memory elements, mixer elements coupling the address ports to a high dimensional plurality of the plurality of nano-memory elements, and data output ports and structure coupled to the plurality of nano-memory elements. The high dimensional plurality of nano-memory elements is greater than the low dimensional plurality of address ports by a number resulting in substantially error free memory recalls.
REFERENCES:
patent: 4725791 (1988-02-01), Susak et al.
patent: 5323344 (1994-06-01), Katayama et al.
patent: 5614435 (1997-03-01), Petroff et al.
"Pulse Current Trimming of Polysilicon Resistors", Feldbaumer et al., IEEE Transactions on Electron Devices, vol. 42, No. 4, Apr. 1995, pp. 689-696.
"Theory and Application of Polysilicon Resistor Trimming", Feldbaumer et al., Solid-State Electronics, vol. 38, No. 11, 1995, pp. 1861-1869.
Koch William E.
Lam David
Motorola Inc.
Parsons Eugene A.
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