Quantum lithography mask and fabrication method

Details Quantum lithography mask and fabrication method Quantum lithography mask and fabrication method

1990-07-06

1992-08-04

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156655, 156656, 1566591, 156664, 430 5, 378 35, 427256, B44C 122

Patent

active

051356090

ABSTRACT:
Thin film masks with precisely located and positioned features are manufactured using a methodology herein called quantum lithography. A thin film layer, such as a chromium film, is deposited on a substrate such as quartz glass. Then, a set of precisely located dividing lines is defined in the thin film layer. The dividing lines are spaced in accordance with a predefined coordinate system and intersect so as to define tiles between the dividing lines. An electron beam pattern generator may be used to generate a large number of identical masks having a thin film with precisely located dividing lines. These masks will each be customized by subsequent processing steps. Each such mask is customized by selectively identifying a subset of the tiles and removing the selected subset of tiles to form a mask pattern in the thin film layer. The resulting pattern has very precisely located edges because the edges correspond to dividing lines formed using a precision patterning system, such an electron beam pattern generator. However, the actual light blocking pattern of the mask can be defined using a much lower accuracy pattern generator. An alternate embodiment of the invention uses a quantized additive process. A set of precisely located boundary lines are formed on a substrate to form a generic mask. The generic mask is customized by removing a subset of the boundary lines, and then selectively depositing a masking material inside the closed regions defined by the remaining boundary lines.

REFERENCES:
patent: 4199358 (1980-04-01), Parsons
patent: 4738746 (1988-04-01), Clariou
T. A. Fulton & G. J. Dolan, "New approach to electron beam lithography", Appl. Phys. Lett., vol. 42(8), Apr. 15, 1983.

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