Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – Integrated structure
Reexamination Certificate
2011-07-12
2011-07-12
Zweizig, Jeffrey S (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Specific identifiable device, circuit, or system
Integrated structure
C327S581000
Reexamination Certificate
active
07978006
ABSTRACT:
A quantum interference transistor may include a source; a drain; N channels (N≧2), between the source and the drain, and having N−1 path differences between the source and the drain; and at least one gate disposed at one or more of the N channels. One or more of the N channels may be formed in a graphene sheet. A method of manufacturing the quantum interference transistor may include forming one or more of the N channels using a graphene sheet. A method of operating the quantum interference transistor may include applying a voltage to the at least one gate. The voltage may shift a phase of a wave of electrons passing through a channel at which the at least one gate is disposed.
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Chung Hyun-jong
Hong Ki-ha
Kim Jong-Seob
Seo Sun-ae
Shin Jai-kwang
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Zweizig Jeffrey S
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