Quantum interference effect semiconductor device and method of p

Details Quantum interference effect semiconductor device and method of p Quantum interference effect semiconductor device and method of p

1992-08-19

1995-04-11

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 12, 257 14, 257 27, 257194, H01L 2980

Patent

active

054060940

ABSTRACT:
A quantum interference effect transistor comprising a semiconductor substrate, an n-type first semiconductor layer, a channel second semiconductor layer, an n-type third semiconductor layer, a gate electrode, a source electrode, a drain electrode, a source region and a drain region, said second semiconductor layer having an electron affinity larger than that of the first and third layers to generate a two dimensional electron gas channel, characterized in that the channel second layer between the source and drain regions consists of lead portions and a middle portion sandwiched with them, and in the middle portion the channel is divided into two channel passages without forming a separation layer in the second layer. The first, second and third layers form a quantum well structure. The middle portion of the second layer is thicker than the lead portions, so that a quantum well width at the middle portion is wider and has a larger amount of bending of a conduction band bottom Ec to divide an electron probability distribution into two parts with peaks.

REFERENCES:
patent: 4550330 (1985-10-01), Fowler
patent: 4748484 (1988-05-01), Takakuwa et al.
patent: 4908325 (1990-03-01), Berenz
patent: 4977435 (1990-12-01), Yoshimura et al.
patent: 5151757 (1992-09-01), Enoki et al.
S. Datta, "Quantum Devices", Superlattices and Microstructures, vol. 6, No. 1, 1989, pp. 83-93.

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