Quantum inclusion effect lateral field emitter

Electric lamp and discharge devices – Discharge devices having a thermionic or emissive cathode

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313309, 313336, 313496, 257 10, H01J 130, H01J 1924

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active

057214670

ABSTRACT:
A field emission cold cathode is disclosed which comprises a first thin film formed of an emitting material and second thin films differing in composition from the first thin film, wherein the second thin films are superposed one each on the main surfaces of the first thin film to form a laminated structure, the lateral sides of the laminated structure expose the lateral end parts of the first thin film and the second thin films, and the exposed end parts of the first thin film emit electrons under an electric field. A method for the production of the cold cathode is also disclosed.

REFERENCES:
patent: 5308439 (1994-05-01), Cronin et al.
patent: 5384509 (1995-01-01), Kane et al.
patent: 5610471 (1997-03-01), Bandy et al.
C.A. Spindt et al., "Physical Properties of Thin-Film Field Emission Cathodes with Molybdenum Cones", J. Appl. Phys., 47(12):5248-5263 (1976) (no month).
S. Bandy et al., "Complete Vacuum Microelectronic Structures Using GaAs", Proc. IEDM, pp. 375-378 (1992). (Dec).
T. Oshima et al., Electron Beam Emission From GaAs Field Emitter Covered with GaAs/A/As Superlattice, J. Soc. Appl. Phys., Abstract 30p-T-14 (1995) (no month).

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