Quantum dots nucleation layer of lattice mismatched epitaxy

Details Quantum dots nucleation layer of lattice mismatched epitaxy Quantum dots nucleation layer of lattice mismatched epitaxy

2006-01-06

2008-10-07

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S962000, C257SE29071, C977S774000

Reexamination Certificate

active

07432175

ABSTRACT:
Lattice mismatched epitaxy and methods for lattice mismatched epitaxy are provided. The method includes providing a growth substrate and forming a plurality of quantum dots, such as, for example, AlSb quantum dots, on the growth substrate. The method further includes forming a crystallographic nucleation layer by growth and coalescence of the plurality of quantum dots, wherein the nucleation layer is essentially free from vertically propagating defects. The method using quantum dots can be used to overcome the restraints of critical thickness in lattice mismatched epitaxy to allow effective integration of various existing substrate technologies with device technologies.

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