Quantum dot based pressure switch

Details Quantum dot based pressure switch Quantum dot based pressure switch

2008-04-15

2008-04-15

Landau, Matthew C. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257SE29069, C257S417000

Reexamination Certificate

active

11281093

ABSTRACT:
A semiconductor heterostructure based pressure switch comprising: first and second small bandgap material regions separated by a larger bandgap material region; a third small bandgap material region within the region of larger bandgap material, the third material region and larger bandgap material region defining at least one quantum dot; and, first and second electrodes electrically coupled to the first and second small bandgap material regions, respectively, wherein the electrodes are sufficiently proximate to said quantum dot to facilitate electron tunneling there between when a pressure is applied to the bandgap material defining the quantum dot.

REFERENCES:
patent: 6498354 (2002-12-01), Jefferson et al.
patent: 6727524 (2004-04-01), Kurtz
Liu et al., Strain-Induced Quantum Ring Hole States in a Gated Vertical Quantum Dot, Phys. Rev. Lett. 89, pp. 096804-1 to 096804-4.
Yakimov et al., Longitudinal conductivity of Ge/Si heterostructures with quantum dots, JETP Lett. 63, pp. 444-447.
Zhuang, L., Guo L. and Chou, S. Y., “Silicon Single-Electron Quantum Dot Transistor Switch Operating at Room Temperature,” Applied Physics Letter, vol. 10, p. 1205, 1998.
Singh, J., Physics of Semiconductors and Their Heterostructures, (McGraw-Hill, New York, 1993), p. 229 to 239.

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