Quantum coherent switch utilizing commensurate nanoelectrode...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S039000, C257S295000, C257SE29070, C257SE29071, C257SE29301, C359S108000, C359S199200

Reexamination Certificate

active

07408235

ABSTRACT:
A quantum coherent switch having a substrate formed from a density wave (DW) material capable of having a periodic electron density modulation or spin density modulation, a dielectric layer formed onto a surface of the substrate that is orthogonal to an intrinsic wave vector of the DW material; and structure for applying an external spatially periodic electrostatic potential over the dielectric layer.

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patent: 6724056 (2004-04-01), Blumberg et al.
patent: 6735073 (2004-05-01), Blumberg
patent: 2007/0007568 (2007-01-01), Tanaka et al.
Kurita et al., “Field Modulation Effects on Charge-Density-Wave Conduction in NbSe.sub.3,” Physica B, 284-288 (2000), pp. 1161-1662.
Adelman, “FET modulation of charge density-wave transport in NbSe(3) and TaS(3)”, The American Physical Society, 1995, pp. 5264-5267.
Thorne, Charge-Density-Wave Conductors, Physics Today, p. 42, (May 1996).

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