Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-02-06
1996-07-23
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 14, 257 24, H01L 2906, H01L 310328
Patent
active
055392148
ABSTRACT:
A quantum bridge structure including wires of a semiconductor material such as silicon which are formed by selectively etching a superlattice of alternating layers of at least two semiconductor materials. The quantum bridge is useful as a photo emission device, a photo detector device, and a chemical sensor. The wires exhibit improved electrical conduction properties due to decreased Coulomb scattering.
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Lynch William T.
Tanner Martin O.
Wang Kang L.
Hille Rolf
Ostrowski David
Regents of the University of California
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