Qualifying patterns, patterning processes, or patterning...

Details Qualifying patterns, patterning processes, or patterning... Qualifying patterns, patterning processes, or patterning...

2005-06-07

2005-06-07

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C382S144000, C382S145000, C716S030000, C716S030000, C716S030000

Reexamination Certificate

active

06902855

ABSTRACT:
The invention is a method of determining the presence of an anomaly in qualifying a pattern, patterning process, or patterning apparatus used in the fabrication of microlithographic patterns. A preferred implementation of the method qualifies incoming reticles and process conditions on test wafers to maximize the available usable process window for a given reticle exposure tool combination. Practicing this method on test wafers enables the identification of spatial areas where a process will fail first and candidate regions for carrying out defect inspection and metrology. Other preferred implementations of the method qualify masks, reticles, or other patterns characterized by data bases on which are stored image data acquired by practice of aerial image measurement system (AIMS) or design rule checking (DRC) techniques.

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Sahouria et al., “Full Chip Process Simulation for Silicon DRC,” Mentor Graphics, Mar. 2000, 6 pages.
Granik et al., “Sub-resolution process windows and yield estimation technique based on detailed full-chip CD simulation,” Mentor Graphics, Sep. 2000, 5 pages.

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