Quadruple gate field effect transistor structure for use in inte

Details Quadruple gate field effect transistor structure for use in inte Quadruple gate field effect transistor structure for use in inte

1997-04-18

2000-02-29

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 438157, H01L 2701, H01L 2712, H01L 310392

Patent

active

060312696

ABSTRACT:
A quadruple gate field effect transistor (FET) is provided in a silicon-on-insulator or semiconductor-on-insulator (SOI) structure. The silicon substrate is surrounded by a polysilicon material on at least three sides to form a gate. Additionally, the substrate can be surrounded by a fourth side to form a quadruple gate structure. The quadruple gate provides superior current densities across the channel region of the FET. A metal via can be provided to the silicon substrate to avoid floating substrate effects. A flexible support substrate may be coupled to an oxide layer.

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Patent application for Multilayer Quadruple Gate Filed Effect Transistor Structure for Use in Integrated Circuit Devices; filed Apr. 18, 1997, by Yowjuang W. Liu, Ser. No. 08/837,557.
Patent application for Multilayer Floating Gate Field Effect Transistor Structure for Use in Ingtegrated Circuit Devices; filed Apr. 18, 1997, by Yowjuang W. Liu, Ser. No. 08/837,556.

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