Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor
Patent
1995-03-28
1997-04-29
Picard, Leo P.
Electricity: electrical systems and devices
Electrostatic capacitors
Fixed capacitor
361305, 3613063, 3613214, 3613212, 361313, 257295, 29 2542, H01G 406
Patent
active
056255292
ABSTRACT:
PZT ferroelectric thin films for capacitors comprise a combination of a donor dopant and an acceptor dopant in a total amount of about 0.1 to 8 mole percent of PZT, or Sc alone in an amount of about 0.1 to 5 mole percent. Nb or Ta is employed as a donor dopant, while Sc, Mg or Zn can be used as an acceptor dopant. The presence of a single Sc acceptor dopant, or both an acceptor dopant and a donor dopant, results in increased endurance. Fatigue cycles are increased on the order of about 10.sup.5 relative to dopant-free films. Doping with a single Sc acceptor dopant, or both an acceptor dopant and a donor dopant, reduces coercive field, allowing PZT films to switch at relatively low voltages. PZT thin films of a pure perovskite phase are obtained in which a pyrochlore phase is completely excluded. Pt may be used as an electrode material. The leakage current of PZT films doped with both the acceptor and donor elements are similar to the leakage current level of pure PZT thin films.
REFERENCES:
patent: 5314651 (1994-05-01), Kulwicki
Lee et al., Mat. Res. Symp. Proc., 361, 421-426 (1995).
Chung Chi-won
Chung Il-sub
Lee Jun-ki
Lee Wan-in
Yoo In-kyung
Dinkins Anthony
Picard Leo P.
Samsung Electronics Co,. Ltd.
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