Pyrocatechol-amine-water solution for the determination of defec

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156662, 252 791, H01L 21306

Patent

active

042382750

ABSTRACT:
The invention is directed to a novel method for detecting surface damage to polished silicon wafers. For very fine defects and scratches an oxidation step is used. The oxide is removed and the wafer is treated in an etch solution containing pyrocatechol, ethylene diamine and water. The defects are detectable by the naked eye.

REFERENCES:
J. Electrochem. Soc.: Solid State Science, A Water-Amine-Complexing Agent System for Etching Silicon by R. M. Finne et al, Sep. 1967, pp. 965-970.
J. Electrochem. Soc.: Solid State Science, Substrate Surface Preparation and its Effect on Epitaxial Silicon by P. Rai-Chondhury, Jul. 1971, pp. 1183-1189.
IBM Technical Disclosure Bulletin, vol. 19, No. 9, Feb. 1977, Controlled Anisotropic Etching of Single Crystal Silicon by E. Bassous, pp. 3623-3624.
SCP and Solid State Technology, Slip and Bowing Control by Advanced Etching Techniques by Charles Wenzel, Aug. 1967, pp. 40-44.

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