Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2007-02-27
2007-02-27
Fourson, George R. (Department: 2823)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S253000, C438S254000, C438S397000, C438S695000, C257S296000, C257S306000, C257S532000, C257SE27048
Reexamination Certificate
active
11252328
ABSTRACT:
A capacitor structure which has generally pyramidal or stepped profile to prevent or reduce dielectric layer breakdown is disclosed. The capacitor structure includes a first conductive layer, at least one dielectric layer having a first area provided on the first conductive layer and a second conductive layer provided on the at least one dielectric layer. The second conductive layer has a second area which is less than the first area of the at least one dielectric layer. A method of fabricating a capacitor structure is also disclosed.
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Chen Fu-Hsin
Chen Ying-De
Chu Eugene
Huang Kun-Ming
Wang YJ
Fourson George R.
García Joannie Adelle
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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