Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-03-13
1999-11-09
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438648, 438653, 438680, 438688, H01L 2128
Patent
active
059813822
ABSTRACT:
An embodiment of the instant invention is a method of fabricating a conductive structure for electrically connecting one portion of a semiconductor device to another portion of the device, the method comprising the steps of: providing a continuous liner layer (step 104) of the semiconductor substrate, the liner layer comprised of CVD Al; forming a first conductor (step 106) on the liner layer, the first conductor formed using a source whose output power is in the range of 1 to 5 kW; and forming a second conductor (step 108) on the first conductor, the second conductor formed using a source whose output power is in the range of 10 to 20 kW. Preferably, the conductive structure is selected from the group consisting of: contact, via, and trench. In an alternative embodiment, a nucleation layer is formed (step 104) beneath the continuous liner layer. The nucleation layer is, preferably, comprised of titanium or a Ti/TiN stack. Preferably, the step of forming a first conductor on the liner layer is comprised of depositing an aluminum containing layer using physical vapor deposition. In addition, the step of forming a second conductor on the first conductor is, preferably, comprised of depositing an aluminum containing layer using physical vapor deposition.
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Konecni Anthony J.
Russell Noel
Donaldson Richard L.
Hoel Carlton H.
Quach T. N.
Texas Instruments Incorporated
Valetti Mark A.
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