Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2008-12-12
2010-11-23
Dinh, Son (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185060, C365S185140
Reexamination Certificate
active
07839681
ABSTRACT:
A flash memory cell includes a p-channel flash transistor having a source, a drain, a floating gate, and a control gate, an n-channel flash transistor having a source, a drain coupled to the drain of the p-channel flash transistor, a floating gate, and a control gate, a switch transistor having a gate coupled to the drains of the p-channel flash transistor and the n-channel flash transistor, a source, and a drain, and an n-channel assist transistor having a drain coupled to the drains of the p-channel flash transistor and the n-channel flash transistor, a source coupled to a fixed potential, and a gate.
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Dhaoui Fethi
Hawley Frank
McCollum John
Sadd Michael
Wang Zhigang
Actel Corporation
Dinh Son
Lewis and Roca LLP
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