Push-pull FPGA cell

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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Details

C365S185060, C365S185140

Reexamination Certificate

active

07839681

ABSTRACT:
A flash memory cell includes a p-channel flash transistor having a source, a drain, a floating gate, and a control gate, an n-channel flash transistor having a source, a drain coupled to the drain of the p-channel flash transistor, a floating gate, and a control gate, a switch transistor having a gate coupled to the drains of the p-channel flash transistor and the n-channel flash transistor, a source, and a drain, and an n-channel assist transistor having a drain coupled to the drains of the p-channel flash transistor and the n-channel flash transistor, a source coupled to a fixed potential, and a gate.

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