Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-10-23
2007-10-23
Yoha, Connie C. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185230, C365S189090
Reexamination Certificate
active
11205988
ABSTRACT:
Disclosed is a pumping voltage generating circuit in a nonvolatile semiconductor memory device. The present pumping voltage generating circuit begins a pumping operation for a wordline voltage in response to an accelerating start signal activated from a supply of an external program voltage, rather than a pumping enable signal activated from a program command. According to the pumping voltage generating circuit, the wordline voltage reaches a target voltage earlier, remarkably enhancing an overall operation speed in a nonvolatile semiconductor memory device.
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Kim Woo-Il
Seo Hui-Kwon
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
Yoha Connie C.
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