Pumping voltage generating circuit in nonvolatile...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185230, C365S189090

Reexamination Certificate

active

11205988

ABSTRACT:
Disclosed is a pumping voltage generating circuit in a nonvolatile semiconductor memory device. The present pumping voltage generating circuit begins a pumping operation for a wordline voltage in response to an accelerating start signal activated from a supply of an external program voltage, rather than a pumping enable signal activated from a program command. According to the pumping voltage generating circuit, the wordline voltage reaches a target voltage earlier, remarkably enhancing an overall operation speed in a nonvolatile semiconductor memory device.

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patent: 6449208 (2002-09-01), Kono et al.
patent: 7031202 (2006-04-01), Yoon et al.
patent: 2006/0087886 (2006-04-01), Cho et al.
patent: 8-255493 (1996-10-01), None
patent: 2002-236612 (2002-08-01), None
patent: 2001-0081243 (2001-08-01), None
patent: 2002-0039950 (2002-05-01), None

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