Pump control circuit

Details Pump control circuit Pump control circuit

1997-03-14

2000-12-12

Fears, Terrell W.

Static information storage and retrieval

Powering

36518902, 36518906, 36523006, G11C 1300

Patent

active

061607495

ABSTRACT:
A dynamic random access memory circuit achieves much higher data bandwidth by maximizing the number of memory cell rows that are held open and by indefinitely increasing the time that the rows are open. The boosted voltage of a pump circuit is directed to active rows according to the presence of a pump token. The pump token is present at one location in a circular shift register corresponding to a memory array. The concurrence of the token and a pump-enable signal causes that array to receive a boosted voltage independent of an array-select operation.

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Joynson et al. "Eliminating Threshold Losses in MOS Circuits by Bootstrapping Using Varactor Coupling", IEEE Journal of Solid-State Circuits, vol. SC-7, No. 3, Jun. 1972, pp. 217-224.
Martino et al., "An On-Chip Back-Bias Generator for MOS Dynamic Memory", IEEE Journal of Solid-State Circuits, vol. SC-15, No. 5, Oct. 1980, pp. 820-826.
Fujishima et al., "A Storage-Node-Boosted RAM with Word-Line Delay Compensation", IEEE Journal of Solid-State Circuits, vol. SC-17, No. 5, Oct. 1982, pp. 872-976.

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