Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1978-08-15
1980-01-15
Smith, Alfred E.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250493, G03B 4116
Patent
active
041840780
ABSTRACT:
A method and means for x-ray lithography which utilizes means for producing n a vacuum system a high-temperature plasma from which soft x-rays are emitted. The x-rays pass through a mask exposing an x-ray resist on a substrate to produce the desired pattern on the substrate. The x-ray spectrum has a significant energy in the 1-5 keV range. These x-rays pass through the support layer of the mask, stop in the pattern material (gold) of the mask or, where the pattern material is lacking, are absorbed adequately by the x-ray resist. Since there is very little energy above 5 keV, there is little if any substrate damage due to the x-rays.
REFERENCES:
patent: 3742229 (1973-06-01), Smith et al.
patent: 3743842 (1973-07-01), Smith et al.
patent: 3969628 (1976-07-01), Roberts et al.
patent: 4028547 (1977-06-01), Eisenberger
patent: 4058486 (1977-11-01), Mallozzi et al.
patent: 4061829 (1977-12-01), Taylor
Nagel David J.
Peckerar Martin C.
Crane Melvin L.
Grigsby T. N.
Schneider Philip
Sciascia R. S.
Smith Alfred E.
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