Pulsed write techniques for magneto-resistive memories

Details Pulsed write techniques for magneto-resistive memories Pulsed write techniques for magneto-resistive memories

2006-05-02

2006-05-02

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07038940

ABSTRACT:
A magneto-resistive memory that has a shared word line and sense line is disclosed. By providing the shared word line and sense line, the number of relatively large drivers required to drive the word line and sense line currents can be reduced. This reduces the peripheral overhead of the memory, and may increase the overall density and reduce the overall power of the memory.

REFERENCES:
patent: 3573485 (1971-04-01), Ballard
patent: 4132904 (1979-01-01), Harari
patent: 4553053 (1985-11-01), Ong et al.
patent: 4731757 (1988-03-01), Daughton et al.
patent: 4751677 (1988-06-01), Daughton et al.
patent: 4754431 (1988-06-01), Jenson
patent: 4829476 (1989-05-01), Dupuis et al.
patent: 4887236 (1989-12-01), Schoemann
patent: 4897288 (1990-01-01), Jenson
patent: 5349302 (1994-09-01), Cooper
patent: 5361226 (1994-11-01), Taguchi et al.
patent: 5434826 (1995-07-01), Ravipati et al.
patent: 5515314 (1996-05-01), Kouhei et al.
patent: 5587943 (1996-12-01), Torok et al.
patent: 5595830 (1997-01-01), Daughton
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5650887 (1997-07-01), Dovek et al.
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 5654566 (1997-08-01), Johnson
patent: 5695864 (1997-12-01), Slonczewski
patent: 5701222 (1997-12-01), Gill et al.
patent: 5701223 (1997-12-01), Fontana, Jr. et al.
patent: 5748519 (1998-05-01), Tehrani et al.
patent: 5776537 (1998-07-01), Ryan et al.
patent: 5801529 (1998-09-01), Umemoto et al.
patent: 5861328 (1999-01-01), Tehrani et al.
patent: 5982658 (1999-11-01), Berg et al.
patent: 6134138 (2000-10-01), Lu et al.
patent: 6147922 (2000-11-01), Hurst et al.
patent: 6175525 (2001-01-01), Fulkerson et al.
patent: 6191972 (2001-02-01), Miura et al.
patent: 6269027 (2001-07-01), Hurst
patent: 6317359 (2001-11-01), Black et al.
patent: 6341084 (2002-01-01), Numata et al.
patent: 6493259 (2002-12-01), Swanson
patent: 6532168 (2003-03-01), Swanson
patent: 6538918 (2003-03-01), Swanson
patent: 6724654 (2004-04-01), Swanson
patent: 6850431 (2005-02-01), Swanson
patent: 0 776 011 (1997-05-01), None
patent: 0 776 011 (1997-11-01), None
patent: WO 98/20496 (1998-05-01), None
B Razavi and B.A. Wooley, “Design Techniques for High Speed, High Resolution Comparators,” IEEE Journal of Solid State Circuits, vol. 27, pp. 1916-1926, Dec. 1992.

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