Pulsed laser salicidation for fabrication of ultra-thin silicide

Details Pulsed laser salicidation for fabrication of ultra-thin silicide Pulsed laser salicidation for fabrication of ultra-thin silicide

1998-12-07

2000-12-05

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438664, 438661, 438663, H01L 2144

Patent

active

061566543

ABSTRACT:
Methods are disclosed for forming ultra-thin (.about.300-.ANG.), uniform and stoichiometric C54-titanium silicide with a Ti film thickness of 200-300 .ANG. using pulsed laser salicidation. The invention achieves this by preferably step-scanning from die to die, across the wafer using laser pulses with an optical fluence (laser energy) ranging from 0.1 to 0.2 J/cm.sup.2 for approximately 23 nanoseconds per pulse. The source of radiation can be a XeCl or KrF excimer laser, or one in which the laser's wavelength is chosen such that the laser energy is absorbed the most by the refractory metal, i.e. titanium (Ti), cobalt (Co) or nickel (Ni). The laser beam size is typically die-size or can be fine tuned to 1 to 100 .mu.m and can be optimized to reduce the intensity variation across the laser spot diameter. At each position between 1 to 100 pulses can be emitted on the wafer. Localized heating is possible with the ability to establish the ambient temperature at or below 200.degree. C.

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S. Wolf, Silicon Processing for the VLSI Era, vol. 2: Process Integration, Lattice Press: Sunset Beach CA, pp. 154-160, 1990.

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