Pulsed laser anneal system architecture

Details Pulsed laser anneal system architecture Pulsed laser anneal system architecture

2011-04-12

2011-04-12

Paik, Sang Y (Department: 3742)

Electric heating

Metal heating

By arc

C219S444100, C438S308000, C438S487000

Reexamination Certificate

active

07923660

ABSTRACT:
Disclosed is the method and apparatus for annealing semiconductor substrates. One embodiment provides a semiconductor processing chamber comprising a first substrate support configured to support a substrate, a second substrate support configured to support a substrate, a shuttle coupled to the first substrate support and configured to move the first substrate support between a processing zone and a first loading zone, wherein the processing zone having a processing volume configured to alternately accommodating the first substrate support and the second substrate support.

REFERENCES:
patent: 5923966 (1999-07-01), Teramota et al.
patent: 6242291 (2001-06-01), Kusumoto et al.
patent: 6844523 (2005-01-01), Yamazaki et al.
patent: 1320954 (2001-11-01), None
patent: 08-102476 (1996-04-01), None
First Office Action dated Dec. 11, 2009 for Chinese Patent Application No. 2008102104739.
Notice to File a Response dated Jul. 15, 2010 for Korean Patent Application No. 10-2008-0080115.

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