Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1993-04-07
1995-06-20
Breneman, R. Bruce
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419215, 20419216, 20419217, 20419225, 20419226, C23C 1434
Patent
active
054258600
ABSTRACT:
A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.
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Kaschmitter James L.
Sigmon Thomas W.
Thompson Jesse B.
Truher Joel B.
Breneman R. Bruce
Carnahan L. E.
McDonald Rodney G.
Sartorio Henry P.
The Regents of the University of California
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