Pulse width method for controlling lateral growth in...

Details Pulse width method for controlling lateral growth in... Pulse width method for controlling lateral growth in...

2006-12-26

2006-12-26

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S166000, C438S486000, C257SE31041

Reexamination Certificate

active

07153730

ABSTRACT:
A method is provided for crystallizing a silicon film in liquid crystal display (LCD) fabrication. The method comprises: forming an amorphous silicon film having a thickness in the range of 100 to 1000 Angstroms (Å); irradiating the silicon film with a laser pulse having a pulse width of 50 nanoseconds (ns) or greater, as measured at the full-width-half-maximum (FWHM), using a beamlet width in the range of 3 to 20 microns; and, in response to irradiating the silicon film, laterally growing crystal grains. In one example, irradiating the silicon film may include irradiating with a pulse having a pulse width in the range between 30 and 300 ns FWHM, and an energy density in the range from 200 to 1300 millijoules per square centimeter (mJ/cm2).

REFERENCES:
patent: 6746903 (2004-06-01), Miyasaka

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