Pulling processes and equipment for growing silicon crystals hav

Details Pulling processes and equipment for growing silicon crystals hav Pulling processes and equipment for growing silicon crystals hav

1985-12-06

1987-11-10

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156606, 156DIG89, 148DIG41, C30B 1514, C30B 1520

Patent

active

047055910

ABSTRACT:
Silicon crystals with high and controlled predictable carbon content can be grown by controlling oxygen introduced into the pulling chamber during the melting in standard Czochralski silicon crystal pullers.
Carbon concentration profile of grown crystals can be deduced from the carbon monoxide [CO] concentration real time monitoring, through its integral taken during the whole pulling duration. This process is reproducible, and the carbon content in the silicon is consistent. Means to practice this method are also disclosed.

REFERENCES:
patent: 4400232 (1983-08-01), Ownby et al.
patent: 4415401 (1983-11-01), Wald et al.
patent: 4443411 (1984-04-01), Kalejs
patent: 4591409 (1986-05-01), Ziem et al.
Ahlgren et al, "Increasing Carbon Content in Czochralski Grown Crystals", IBM-TDB, vol. 25, No. 3A, Aug. 1982, pp. 962-963.
Endo et al, "Equilibrium of Carbon and Oxygen in Silicon and Carbon Monoxide in Ambient Atmosphere", Journal of Electrochemical Society, Aug. 1979, vol. 126, No. 8, pp. 1422-1425.

Affiliated with

Also associated with

Rating

Pulling processes and equipment for growing silicon crystals hav does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pulling processes and equipment for growing silicon crystals hav, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pulling processes and equipment for growing silicon crystals hav will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1066321