Pull method for growth of single crystal using density detector

Details Pull method for growth of single crystal using density detector Pull method for growth of single crystal using density detector

1994-03-18

1995-12-19

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 14, 117201, 117202, 117208, C30B 1520

Patent

active

054760640

ABSTRACT:
The density of a melt precisely represents the stability of the melt, so that the initiation of pulling-up operation can be determined on the basis of the changing rate of the density. The pulling-up operation may be started when the density becomes constant, or when the changing rate of the density with respect to the temperature becomes smaller. Since the melt or clusters do not include different minute structures, an obtained single crystal is of high quality free from minute faults or dislocations.

REFERENCES:
patent: 4167554 (1979-09-01), Fisher
patent: 4256681 (1981-03-01), Lindmayer
patent: 4258003 (1981-03-01), Hurle et al.
patent: 4508970 (1985-04-01), Ackerman
patent: 4660149 (1987-04-01), Lissalde et al.

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