Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate
2005-11-22
2005-11-22
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
C257S191000, C257S192000, C257S200000, C257S280000, C257S284000, C257SE29041
Reexamination Certificate
active
06967360
ABSTRACT:
A semiconductor device and its manufacturing method. The semiconductor device has a semi-insulating GaAs substrate310,a GaAs buffer layer321that is formed on the semi-insulating GaAs substrate310,AlGaAs buffer layer322,a channel layer323,a spacer layer324,a carrier supply layer325,a spacer layer326,a Schottky layer327composed of an undoped In0.48Ga0.52P material, and an n+-type GaAs cap layer328.A gate electrode330is formed on the Schottky layer327,and is composed of LaB6and has a Schottky contact with the Schottky layer327,and ohmic electrodes340are formed on the n+-type GaAs cap layer328.
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Anda Yoshiharu
Tamura Akiyoshi
Fourson George
Pham Thanh V.
Wendertoh, Lind & Ponack, L. L. P.
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