Pseudo static random access memory and data refresh method...

Details Pseudo static random access memory and data refresh method... Pseudo static random access memory and data refresh method...

2005-11-22

2005-11-22

Phan, Trong (Department: 2827)

Static information storage and retrieval

Read/write circuit

Data refresh

C365S233100, C365S233500

Reexamination Certificate

active

06967886

ABSTRACT:
A data refresh method of a pseudo static random access memory is implemented by the following procedure. First, an address string and a refresh signal are provided, in which the address string is used for the reference of data reading and writing positions. Secondly, within at least one address of the address string, the active time of a word line of the PSRAM is set to be equivalent to or less than a half of the period of the refresh signal. Then, refreshing performs while the word line is off, and reading and writing are performed while the word line is active. If writing is requested while the word line is off, the writing will be performed when an address transition detection signal ATD switches to the high level in the next address.

REFERENCES:
patent: 4360903 (1982-11-01), Plachno et al.
patent: 6111814 (2000-08-01), Schaefer
patent: 6275437 (2001-08-01), Kim et al.
patent: 6741515 (2004-05-01), Lazar et al.
patent: 6813212 (2004-11-01), Takahashi et al.
patent: 6842392 (2005-01-01), Mizugaki et al.

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