Pseudo-static random access memory

Static information storage and retrieval – Read/write circuit – Data refresh

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365194, G11C 700

Patent

active

050330268

ABSTRACT:
A pseudo-static RAM device is disclosed which operates at high speed in the reading or writing mode and permits a long refreshing period in the self-refreshing mode. In the pseudo-static RAM of the present invention, an activation signal for enabling the sense amplifiers is generated with a variable delay time, from a time point when a designated word line is driven. The delay time is switched in response to a control signal representing the self-refreshing mode to be long enough to transfer 100% of the amount of information stored in the designated driven memory cell to the bit line connected thereto, and is maintained short when the control signal representing the self-refreshing mode is not present.

REFERENCES:
patent: 4581718 (1986-04-01), Oishi

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Pseudo-static random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pseudo-static random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pseudo-static random access memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-137371

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.