Pseudo SRAM

Details Pseudo SRAM Pseudo SRAM

2011-06-07

2011-06-07

Phung, Ahn (Department: 2824)

Static information storage and retrieval

Read/write circuit

Data refresh

C365S154000

Reexamination Certificate

active

07957212

ABSTRACT:
A unit memory cell for use in a pseudo static random access memory (SRAM) includes a cell capacitor; a normal accessing transistor whose gate, drain and source are respectively connected to a normal accessing word line, a normal accessing bit line and a storage node of the cell capacitor; and a refresh accessing transistor whose gate, drain and source are respectively connected to a refresh accessing word line, a refresh accessing bit line and the storage node of the cell capacitor.

REFERENCES:
patent: 5075886 (1991-12-01), Isobe et al.
patent: 5289424 (1994-02-01), Ito et al.
patent: 5617551 (1997-04-01), Corder
patent: 5963497 (1999-10-01), Holland
patent: 6269041 (2001-07-01), Wang et al.
patent: 6801468 (2004-10-01), Lee
patent: 6862247 (2005-03-01), Yamazaki
patent: 7085186 (2006-08-01), Mobley
patent: 7221574 (2007-05-01), Tomita et al.
patent: 2002-312232 (2002-10-01), None
patent: 2003-059264 (2003-02-01), None
patent: 1020010113517 (2001-12-01), None
patent: 1020040036556 (2004-04-01), None

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