Pseudo-Schottky diode

Details Pseudo-Schottky diode Pseudo-Schottky diode

1996-05-15

1998-10-06

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257146, 257328, H01L 2978

Patent

active

058180842

ABSTRACT:
An N-channel MOSFET is fabricated with its source, body and gate connected together and biased at a positive voltage with respect to its drain. The resulting two-terminal device functions generally in the manner of a diode but has a significantly lower turn-on voltage than a conventional PN diode. The device is therefore referred to as a "pseudo-Schottky diode". Pseudo-Schottky diodes have numerous uses, but they are particularly useful when connected to shunt current from a conventional PN diode or MOSFET and thereby prevent such conditions as snapback and latchup which can result from the storage of minority carriers in a forward-biased PN junction. Also, because the pseudo-Schottky diode is a majority carrier device, the diode recovery time, amount of stored charge, and peak reverse current are much lower than in a conventional PN diode.

REFERENCES:
patent: 4967243 (1990-10-01), Baliga et al.
patent: 5304802 (1994-04-01), Kumagai

Affiliated with

Also associated with

Rating

Pseudo-Schottky diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pseudo-Schottky diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pseudo-Schottky diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-81253