Electrical computers and digital processing systems: memory – Storage accessing and control – Specific memory composition
Reexamination Certificate
2006-09-08
2010-06-08
Thai, Tuan V (Department: 2185)
Electrical computers and digital processing systems: memory
Storage accessing and control
Specific memory composition
Reexamination Certificate
active
07734861
ABSTRACT:
Easily implemented randomization within a flash memory EEPROM reduces the NAND string resistance effect, program disturbs, user read disturbs, and floating gate to floating gate coupling that result from repeated and long term storage of specific data patterns. The randomization may be code generated pseudo randomization or user driven randomization in different embodiments. User driven commands, the timing of which cannot be predicted may be used to trigger and achieve a high level of randomization. Randomly altering the encoding scheme of the data prevents repeated and long term storage of specific data patterns. Even if a user wishes to store the same information for long periods, or to repeatedly store it, it will be randomly encoded with different encoding schemes, and the data pattern will therefore be varied.
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Fong Yupin Kawing
Li Yan
Mokhlesi Nima
Davis , Wright, Tremaine, LLP
Doan Duc T
Sandisk Corporation
Thai Tuan V
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