Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1991-02-11
1992-12-29
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257236, 257240, H01L 2978
Patent
active
051756021
ABSTRACT:
There is provided a pseudo bi-phase CCD having improved transmission efficiency that is easy for high-integration and can be designed by a simple process. The pseudo bi-phase CCD of the present invention has a gate electrode width which is reduced in a direction opposite to charge transmission direction in a gate electrode. In a charge coupled device having a plurality of gate electrodes formed on a semiconductor through which charges are transferred, the gate electrodes being separated by an insulation film, each of the gate electrodes includes a first part having a first width and a second width which is wider than the first width, the first width gradually increasing as it moves towards the second width formed in a direction of the charge transfer and a second part coupled to the first part, disposed in the charge transfer direction, the second part having the same width as the second width.
REFERENCES:
patent: 4589005 (1986-05-01), Matsuda et al.
patent: 4688066 (1987-08-01), Elabd
patent: 4839911 (1987-06-01), Boucharlat
Bushnell Robert E.
James Andrew J.
Ngo Ngan Van
Samsung Electronics Co,. Ltd.
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