Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2002-08-12
2010-02-16
Blum, David S (Department: 2813)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
C438S040000, C257SE21214, C257SE21328, C257SE33067
Reexamination Certificate
active
07662650
ABSTRACT:
Disclosed are methods for providing wafer photonic flow control to a semiconductor wafer (1700) having a substrate (1720), at least one active layer (1765) and at least one surface layer (1710). Photonic flow control can be achieved through the formation of trenches (1725) and/or insulating implants (1730) formed in said wafer (1700), whereby active regions (1760) are defined by trenches (1725) that operate as nonconductive areas (1750). Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Photonic flow control at the wafer level is important when using WLBI methods and systems.
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Biard James R.
Guenter James K.
Haji-Sheikh Michael J.
Hawkins Bobby M.
Blum David S
Finisar Corporation
Workman Nydegger
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