Providing current control over wafer borne semiconductor...

Details Providing current control over wafer borne semiconductor... Providing current control over wafer borne semiconductor...

2002-08-12

2011-10-18

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C438S017000, C257S048000, C257SE21521, C257SE21522, C257SE21523, C257SE21529, C257S053000

Reexamination Certificate

active

08039277

ABSTRACT:
Disclosed are methods for providing wafer parasitic current control to a semiconductor wafer (1240) having a substrate (1240), at least one active layer (1240) and at least one surface layer (1240), Current control can be achieved through the formation of patterns (1240) surrounding contacts (1215), said patterns (1240) including insulating implants and/or sacrificial layers formed between active devices represented by said contacts (1215). Current flows through active regions (1260) associated with said contacts (1215) and active devices. Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Current control at the wafer level is important when using WLBI methods and systems.

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