Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-30
2009-08-18
Pham, Thanhha (Department: 2894)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S624000, C438S625000, C438S680000, C257SE21575
Reexamination Certificate
active
07576006
ABSTRACT:
Capping protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. Encapsulating PSAB layers are formed not only at the surface of the metal layers, but also within the unexposed portions of the metal lines. Encapsulating PSAB layer, for example, can surround the metal line with the PSAB material, thereby protecting interfaces between the metal line and diffusion barriers. Encapsulating PSAB layers can be formed by treating the exposed surfaces of metal lines with GeH4. Capping PSAB layers can be formed by treating the exposed surfaces of metal lines with SiH4. Interconnects having both a silicon-containing capping PSAB layer and a germanium-containing encapsulating PSAB layer provide good performance in terms of adhesion, resistance shift, and electromigration characteristics.
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Chattopadhyay Kaushik
Shaviv Roey
Sriram Mandyam
Wu Hui-Jung
Yu Yongsik
Novellus Systems Inc.
Pham Thanhha
Weaver Austin Villeneuve & Sampson LLP
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