Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-11-19
2000-05-02
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, 257546, H01L 2362
Patent
active
060575786
ABSTRACT:
An integrated structure comprises a protective Zener diode connected between a first and a second terminal of the structure, and is formed in a chip of semiconductor material within an insulating region. The structure includes first and second biasing Zener diodes connected back-to-back between the first and the second terminals of the structure. The first and the second biasing diodes are disposed respectively in the opposite direction to and in the same direction as the protective diode, and having a common terminal connected to the insulating region. The protective diode has a reverse threshold voltage lower than a reverse threshold voltage of the second biasing diode.
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Aiello Natale
La Barbera Atanasio
Ortiz Edgardo
Saadat Mahshid
STMicroelectronics S.r.l.
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