Protective configuration against electrostatic discharges in sem

Details Protective configuration against electrostatic discharges in sem Protective configuration against electrostatic discharges in sem

1996-01-24

1997-09-30

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257362, H01L 2978, H01L 2362, H01L 2707

Patent

active

056728930

ABSTRACT:
A configuration for protecting a first semiconductor component being controllable by field effect against electrostatic discharges, includes a voltage-limiting, protective, second semiconductor component being connected to the gate terminal of the first semiconductor component. The second semiconductor component is an integrated bipolar transistor having a collector-to-emitter path being connected between the drain terminal and the gate terminal of the first semiconductor component.

REFERENCES:
patent: 4963970 (1990-10-01), Throngnumchai et al.
patent: 5001529 (1991-03-01), Ohshima et al.
patent: 5426320 (1995-06-01), Zambrano
Book: Power MOSFETs, Theory and Applications, by D. A. Grant and J. Gowar, 1989, pp. 486-492.

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